Presentation Information
[FLX4-4L]Record-High Mobility Polycrystalline GeSn P-Channel Thin-Film Transistors
*Shintaro Maeda1, Kenta Moto2, Linyu Huang2, Atsuki Morimoto2, Keisuke Yamamoto2, Takashi Suemasu1, Kaoru Toko1 (1. University of Tsukuba (Japan), 2. Kyushu University (Japan))
Keywords:
Germanium,Solid phase crystallization,Thin film transistor
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