Presentation Information

[FLX4-4L]Record-High Mobility Polycrystalline GeSn P-Channel Thin-Film Transistors

*Shintaro Maeda1, Kenta Moto2, Linyu Huang2, Atsuki Morimoto2, Keisuke Yamamoto2, Takashi Suemasu1, Kaoru Toko1 (1. University of Tsukuba (Japan), 2. Kyushu University (Japan))

Keywords:

Germanium,Solid phase crystallization,Thin film transistor