Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[FLX4-4L]Record-High Mobility Polycrystalline GeSn P-Channel Thin-Film Transistors
*Shintaro Maeda1, Kenta Moto2, Linyu Huang2, Atsuki Morimoto2, Keisuke Yamamoto2, Takashi Suemasu1, Kaoru Toko1(1. University of Tsukuba (Japan), 2. Kyushu University (Japan))
Keywords:
Germanium,Solid phase crystallization,Thin film transistor
This study focuses on controlling nucleation during the crystallization process of amorphous Ge thin films by introducing multilayer structures. This structure effectively controlled nucleation and expanded crystal grain size. The introduction of this process led to superior polycrystalline Ge based thin film transistor performance compared to other methods, with high field effect mobility (250 cm²/Vs).