[FMC3/PH3-1(Invited)] Synthesis and Tunable Optical Properties of Ag-In-Ga-S Quantum Dots for LED Applications | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[FMC3/PH3-1(Invited)]Synthesis and Tunable Optical Properties of Ag-In-Ga-S Quantum Dots for LED Applications

*Tsukasa Torimoto¹, Makoto Tozawa¹, Kazutaka Akiyoshi¹, Tatsuya Kameyama¹, Genichi Motomura², Taro Uematsu³, Susumu Kuwabata³(1. Nagoya University (Japan), 2. Japan Broadcasting Corporation (Japan), 3. Osaka University (Japan))

https://doi.org/10.36463/idw.2024.0321

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Keywords:

Multinary semiconductor,Quantum dot,Photoluminescence,Electroluminescence,Light emitting diode

Quantum dots (QDs) composed of Ag-In-Ga-S solid solution had a tunable energy gap (E_g) that increased with an increase in the Ga/In ratio. These QDs exhibited a sharp band-edge photoluminescence peak by GaS_x shell coating. Light-emitting diodes fabricated with these QDs exhibited a bright electroluminescence peak, with the color tunable from yellow to green to blue by varying their E_g.

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