[FMCp2-10]Impact of Selective Substitutional Growth on Subthreshold Swing by PEALD Deposition Sequences
*SeongHun Yoon1, Seon Woong Bang1, Jae Kyeong Jeong1(1. Hanyang University (Korea))
Keywords:
Oxide semiconductor,subthreshold swing,atomic layer deposition,conversion mechanism
In this study, the impact of various metal defects formed through selective substitutional growth by diethylzinc (DEZn) on the subthreshold swing (SS) in plasma-enhanced atomic layer deposition (PEALD)-derived indium-gallium-zinc oxide (IGZO) films was investigated. Among these defects, In-Zn defects were found to play a critical role in achieving a high SS value of 0.31 V/decade in IGZO thin-film transistors (TFTs).