Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[FMCp2-12L]Effect of Combination Annealing with Water and Ethanol Vapors Added to NH3 Gas on Reduction of Residual OH Bonds in Si Oxide Films
*Susumu Horita1(1. Japan Advanced Institute of Science and Technology (Japan))
Keywords:
Si oxide films,NH3,water,OH,low-temperature
It was found that reduction of residual OH bonds in SiOx films by using the combination NH3 annealing, in which dry, water-vapor-added, and ethanol-vapor-added NH3 gases are flown in sequence, is effective more than the cases with a single dry and a single water-added NH3 gas. We discuss this based on rehydroxylation and dehydroxylation of Si-O-Si bonds, and alkoxylation due to ethanol.