The International Display Workshops

This study explores the effects of wet and dry etching on the performance of IGZO TFTs, focusing on sidewall conductance and oxygen vacancy formation. Transfer curve measurements and positive and negative gate bias stress results revealed that wet-etched TFTs exhibited more pronounced humps, likely due to increased oxygen vacancies on the exposed sidewalls. In contrast, dry-etched TFTs showed minimal shift in the NBS test and no significant humps.