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Dependence of Recovery Characteristics of a-IGZO TFTs on Annealing Temperature

We investigated the temperature-dependent recovery of threshold voltage shifts in a-IGZO TFTs after gate bias application. Recovery was observed below 110 °C due to charge release, and above 110 °C due to trap state annihilation. This study suggests hydrogen plays a key role in trap state changes under gate bias.

The International Display Workshops

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

[FMCp2-15L]Dependence of Recovery Characteristics of a-IGZO TFTs on Annealing Temperature

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