[MEET5-1(Invited)] Ferroelectric TFTs for Next Generation Memory and Display | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[MEET5-1(Invited)]Ferroelectric TFTs for Next Generation Memory and Display

*Jin Jang¹, Taebin Lim¹, Heonbang Lee¹, Samiran Roy¹(1. Kyung Hee University (Korea))

https://doi.org/10.36463/idw.2024.1124

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Keywords:

Ferroelectric,Transistor,New concept driving,Ferroelectric material,FE Electronics

We review our results on ferroelectric-semiconductor field-effect transistor (FeS-FET). The fabricated In₂Se₃ FeS-FET shows a large hysteresis window. We have developed a new ferroelectric ZrAlO (ZAO) which can be used for GI for FETs. In this talk, I will explain our recent results on 2D ferroelectric TFTs using gamma phase In₂Se₃ and oxide TFTs with ferroelectric ZAO GI for future ferroelectric thin-film electronics.

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