Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[MEET5-2(Invited)]Metal Oxynitride Semiconductor Prepared by Reactive Sputtering of Metal Oxide Target for Thin Film Devices
Yuseong Jang1, *Soo-Yeon Lee1(1. Seoul National University (Korea))
Keywords:
metal oxynitride,metal oxide,ferroelectric,HfZrOx
In this paper, a metal oxynitride semiconductor was grown by radio-frequency reactive sputtering of metal oxide target. We highlight the potential of this material, featuring a small bandgap energy with passivation of oxygen vacancy, by comparing the performance of thin film devices using a metal oxide semiconductor.