[MEET7-2(Invited)] Exciplex Sensitized InP-based Quantum Dot Light Emitting Diodes for Long Device Lifetime | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

Back

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[MEET7-2(Invited)]Exciplex Sensitized InP-based Quantum Dot Light Emitting Diodes for Long Device Lifetime

*Jang Hyuk Kwon¹, Thi Thuy Truong¹, Nisha Vergineya S¹(1. Kyung Hee University (Korea))

https://doi.org/10.36463/idw.2024.1152

Download PDF

Keywords:

Quantum dots,Exciplex energy harvesting layer,leaked electron,energy transfer,long lifetime

Here, we report on the efficiency and long lifespan of inverted green InP-based QLEDs that use an exciplex as EHL. The exciplex EHL is composed of KHU-A as n-type material and ([1,1′-biphenyl]-4-yl).-9′-phenyl-9H,9′H-3,3′-bicarbazole (BPP-BCZ) as a p-type material. The optimized device with a exciplex EHL (6:4 ratio) showed a peak EQE of 17.3% and an expected device lifespan (LT50) of 1881 hours at 1000 nits.

Back