Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
Proceedings of the International Display Workshops Volume 31 (IDW '24)
Dec 4 - Dec 6, 2024Sapporo Convention Center
[MEETp1-7]Effect of N2O Annealing on the Performance of Crystal IGTO TFTs
*Jiwon Sun1, Yuna Kim1, Seungchae Jung1, Taebin Lim1, Jin Jang1(1. Kyung Hee University (Korea))
Keywords:
InGaSnO (IGTO),Post fabrication annealing (PFA),Thin-Film Transistors (TFTs)
We report the effect of N2O post fabrication annealing on the performance of crystal indium-gallium tin oxide (c-IGTO) thin film transistors (TFTs). The c-IGTO exhibit improved operation stability under positive bias temperature stress (PBTS) conditions of threshold voltage shift of -0.5 V after N2O post-fabrication annealing.