[MEETp1-9] Polymer-Quantum Dot Ternary Bulk-Heterojunction InGaZnO Phototransistor for Effective Infrared Detection | Proceedings of the International Display Workshops Volume 31 (IDW '24)

Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

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Proceedings of the International Display Workshops Volume 31 (IDW '24)

Dec 4 - Dec 6, 2024Sapporo Convention Center

[MEETp1-9]Polymer-Quantum Dot Ternary Bulk-Heterojunction InGaZnO Phototransistor for Effective Infrared Detection

*Seungchae Jung¹, Hansol Jeong¹, Yuna Kim¹, Jiwon Sun¹, Jin Jang¹(1. Kyung Hee University (Korea))

https://doi.org/10.36463/idw.2024.1219

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Keywords:

phototransistor,quantum dots,indium-gallium-zinc-oxide,bulk-heterojunction,infrared

We demonstrate infrared detecting phototransistor with amorphous indium gallium zinc oxide thin film transistor and ternary organic polymer bulk-heterojunction blended with lead sulfide quantum dots as photo absorption layer. The device showed 109 A/W at 0.1mW/cm² in exposure to 1650nm light source and response time of 133/199ms.

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