[AMD1-4] One-Step Crystallization of InGaZnO Thin Film by Spray Pyrolysis for High Performance Thin Film Transistor Applications | Proceedings of the International Display Workshops Volume 32 (IDW '25)

Proceedings of the International Display Workshops Volume 32 (IDW '25)

Dec 2 - Dec 5, 2025International Convention Center Hiroshima

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Proceedings of the International Display Workshops Volume 32 (IDW '25)

Dec 2 - Dec 5, 2025International Convention Center Hiroshima

[AMD1-4]One-Step Crystallization of InGaZnO Thin Film by Spray Pyrolysis for High Performance Thin Film Transistor Applications

*Arqum Ali¹, Jeong-Hwan Lee¹(1. Inha University (Korea))

https://doi.org/10.36463/idw.2025.0162

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Keywords:

Crystalline InGaZnO,High-Mobility,Thin-film Transistor

We demonstrated as-grown crystalline InGaZnO (c-IGZO) thin film by spray pyrolysis at a substrate temperature of 425 °C without any subsequent crystallization process. The fabricated c-IGZO TFT exhibited high field-effect mobility of 44.93 cm²/Vs and excellent stability under positive bias temperature stress. Therefore, c-IGZO TFTs produced by spray pyrolysis are promising for low-cost, high-resolution display applications.

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