[AMD2-1] Dual-Metal Source Contacts Double the Programming Speed in LTPS Pixel Circuits with Contact-Controlled TFT Switches | Proceedings of the International Display Workshops Volume 32 (IDW '25)

Proceedings of the International Display Workshops Volume 32 (IDW '25)

Dec 2 - Dec 5, 2025International Convention Center Hiroshima

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Proceedings of the International Display Workshops Volume 32 (IDW '25)

Dec 2 - Dec 5, 2025International Convention Center Hiroshima

[AMD2-1]Dual-Metal Source Contacts Double the Programming Speed in LTPS Pixel Circuits with Contact-Controlled TFT Switches

*Eva Bestelink¹, Pongsakorn Sihapitak², Mark D. Ilasin², Juan Paolo Bermundo², Yukiharu Uraoka², Radu A. Sporea¹(1. University of Surrey (UK), 2. Nara Institute of Science and Technology (Japan))

https://doi.org/10.36463/idw.2025.0165

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Keywords:

LTPS,off-state,source-gated transistor,multimodal transistor

Source energy barriers enable contact-controlled transistors to achieve excellent performance as pixel drivers due to early saturation and flat output curves. Their low off-state leakage is attractive for switch applications; however, low on-current may limit transient performance. Introducing a dual-work-function contact significantly improves transient behavior for a range of barrier heights.

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