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Monolithic 3D Integration of Vertically Stacked IGZO-Te CMOS Inverter

We demonstrate monolithic 3D (M3D) integration of vertically stacked CMOS inverters using n-type IGZO and p-type Te TFTs. Vacuum-based fabrication ensures high-quality films, while the stacked architecture shortens interconnects and increases integration density. Compared with planar CMOS, the inverters show robust operation with a simpler process.

The International Display Workshops

Proceedings of the International Display Workshops Volume 32 (IDW '25)

Proceedings of the International Display Workshops Volume 32 (IDW '25)

[AMD2-3L]Monolithic 3D Integration of Vertically Stacked IGZO-Te CMOS Inverter

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