[AMD2-4L] High-Performance p-Type Tellurium-Selenium Oxide Thin-Film Transistors Fabricated by Sputtering | Proceedings of the International Display Workshops Volume 32 (IDW '25)

Proceedings of the International Display Workshops Volume 32 (IDW '25)

Dec 2 - Dec 5, 2025International Convention Center Hiroshima

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Proceedings of the International Display Workshops Volume 32 (IDW '25)

Dec 2 - Dec 5, 2025International Convention Center Hiroshima

[AMD2-4L]High-Performance p-Type Tellurium-Selenium Oxide Thin-Film Transistors Fabricated by Sputtering

*Hojeong Jo¹, Seongcheol Jang¹, Hyun-suk Kim¹(1. Dongguk University (Korea))

https://doi.org/10.36463/idw.2025.0176

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Keywords:

p-type oxide thin-film transistor,RF magnetron sputtering,high-k gate dielectric,Te

In the study, high-performance p-type Te_xSe_yO thin-film transistors were fabricated by RF magnetron sputtering, enabling superior film quality. Al₂O₃ layer was employed as high-k gate dielectric for low-power operation and passivation. The devices exhibited enhanced mobility, improved on/off current ratio, and significantly better long-term stability compared with conventional p-type Te transistors.

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