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Recent Studies on Device Modeling for Oxide Semiconductor TFTs

This paper discusses device models to predict the electrical characteristics of oxide semiconductor thin-film transistors (OS TFTs) with a dual-gate structure, a bilayer channel, and under positive-bias stresses. Device simulations using the appropriate device models can readily describe the operations and mechanisms of these OS TFTs.

The International Display Workshops

Proceedings of the International Display Workshops Volume 32 (IDW '25)

Proceedings of the International Display Workshops Volume 32 (IDW '25)

[AMD4-2(Invited)]Recent Studies on Device Modeling for Oxide Semiconductor TFTs

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