[14p-P11-5]Measurement of carrier injection barrier at metal/semiconductor interfaces using the displacement current technique
〇Seiichi Sato1, Fumitaka Miyao1, Kesuke Yoshida1, Hiroyuki Tajima1(1.Univ. of Hyogo)
Keywords:
Schottky barrier,phthalocyanine
We will introduce a simple method to evaluate carrier injection barriers at metal-semiconductor interfaces by applying triangular-wave voltages. This method is applicable to various metal-semiconductor interfaces. As concrete examples, we will show the results of a Ag-phthalocyanine interface and an interface including a MoO3 layer, which is a hole transport layer, between Ag and phthalocyanine.
