JSAP Spring / Autumn Meeting

III-V compound semiconductor GaAs nanowire has a high luminous efficiency such that a single nanowire itself functions as a laser. On the other hand, the influence of surface nonradiative recombination is remarkable for the same material, and various attempts to suppress this have been made. In the fabrication of AlGaAs / GaAs core shell nanowires, we tried to naturally oxidize the AlGaAs layer and grow AlGaAs passivation layer inside nanowire. The results of evaluating the fabricated nanowire are reported.