The 81st JSAP Autumn Meeting, 2020
Sep 8 - Sep 11, 2020Online Virtual Meeting
The 81st JSAP Autumn Meeting, 2020
Sep 8 - Sep 11, 2020Online Virtual Meeting
[8p-Z22-1]High thermoelectric performance of Si-Ge alloy by modifying the electronic structure
〇(PC)Omprakash Muthusamy1, Saurabh Singh1,3, Masahiro Adachi2, Yoshiyuki Yamamoto2, Tsunehiro Takeuchi1,3,4,5(1.Toyota Tech. Inst, 2.Sumitomo Ele. Ind., 3.CREST, 4.MIRAI, 5.Nagoya Univ.)
Keywords:
Si-Ge,ball milling,thermoelectric property
In order to improve the figure of merit ZT, many strategies have been reported. For example, the nano-structuring and modulation doping approach has been utilized to improve the thermoelectric properties of Si-Ge alloy by decreasing thermal conductivity without degrading the power factor.
Our previous studies revealed that the B-doped Si-Ge-Au thin film and bulk sample possessed a ZT value of 1.38 and 1.63 at 1000K. We found that the electron transport properties were constructively improved using Au-doping to form an impurity state near the valence band top, and B-doping to control the Fermi level. Very small thermal conductivity ~ 1.5 Wm-1K-1 was obtained due to nanograins. However, Au is an expensive element, and more than ZT = 1.63 is required for improving efficiency. In the present study, we synthesized bulk noncrystalline B-doped Si-Ge alloy with other metal substitution, which is a cheap and non-toxic element. Thermoelectric properties (TE) of bulk nanocrystalline samples were investigated as a function of temperature 300 – 1000 K, respectively.
Our previous studies revealed that the B-doped Si-Ge-Au thin film and bulk sample possessed a ZT value of 1.38 and 1.63 at 1000K. We found that the electron transport properties were constructively improved using Au-doping to form an impurity state near the valence band top, and B-doping to control the Fermi level. Very small thermal conductivity ~ 1.5 Wm-1K-1 was obtained due to nanograins. However, Au is an expensive element, and more than ZT = 1.63 is required for improving efficiency. In the present study, we synthesized bulk noncrystalline B-doped Si-Ge alloy with other metal substitution, which is a cheap and non-toxic element. Thermoelectric properties (TE) of bulk nanocrystalline samples were investigated as a function of temperature 300 – 1000 K, respectively.