[23p-A602-1~16] 15.5 Group IV crystals and alloys

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-A602-9] Evaluation of interface trap density of strained Si/SiGe/Si(110) MOS structures

〇Yuki Aonuma¹, Taisuke Fujisawa¹, Miki Horiuchi¹, Mizuki Kikkawa¹, Junji Yamanaka¹, Kosuke Hara¹, Kiyokazu Nakagawa², Keisuke Arimoto¹ (1.Yamanashi Univ., 2.Tokyo City Univ.)

Keywords:

interface trap,strained Si,MOS