JVSS 2023
Oct 31 - Nov 2, 2023Nagoya Congress Center
JVSS 2023
Oct 31 - Nov 2, 2023Nagoya Congress Center
[1Dp05]Concentration dependence of Hydrogen diffusion in Platinum film
*Sudhansu Sekhar Das1, Takahiro Ozawa1, Hiroshi Nakanishi2, Yuya Komatsu3, Ryota Shimizu3,4, Taro Hitosugi3,4, Katsuyuki Fukutani1,5(1. Institute of Industrial Science, University of Tokyo, 2. National Institute of Technology, Akashi College, 3. School of Materials and Chemical Technology, Tokyo Institute of Technology, 4. Department of Chemistry, University of Tokyo, 5. Advanced Science Research Center, Japan Atomic Energy Agency (JAEA))
Hydrogen diffusion in a polycrystalline Pt(25nm) film hydrogenated by the H+-ion implantation technique is studied through resistance relaxation experiments at different temperatures in the range 5 – 200K. The H-hopping rate which follows a linear Arrhenius behaviour in the classical regime (140 K < T < 200 K), transforms to a rather weak temperature-dependent quantum regime below 140 K. The activation energy EA extracted from the Arrhenius slope from the thermal regime shows a decrease from 115 meV to 70 meV when x in the PtHx rise from 0.23 to 0.45 H/Pt. This indicates that H-atomic levels at the metastable sites of PtHx are modified by the dominance of the repulsive H-H interaction at higher x.
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