SISPAD2023
Sep 26 - Sep 29, 2023
SISPAD2023
Sep 26 - Sep 29, 2023
[P-04]First-Principles Study of Charged Point Defects in 4H-SiC: Accurate Formation Energies, Trap Levels, and Beyond
*Haruhide Miyagi1, Ulrik G. Vej-Hansen2, Brad A. Wells2, Jan-Niclas Luy2, Christoph Zechner3(1. Nihon Synopsys G.K., 2. Synopsys Denmark, 3. Synopsys GmbH)