[Session_5-01]【Invited】Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics
*Andrea Padovani1, Paolo La Torraca1, Luca Larcher2, Jack Strand3, Alexander Shluger3(1. University of Modena and Reggio Emilia, 2. Applied Materials, 3. University of College London)
