1981 Conference on Solid State Devices
Aug 26 - Aug 27, 1981The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
1981 Conference on Solid State Devices
Aug 26 - Aug 27, 1981The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[A-3-4]A New Method of Characterizing the In-depth Profile of Thermally Induced Defects in CZ Si
Hiroshi NAKAYAMA, Johji KATSURA, Taneo NISHINO, Yoshihiro HAMAKAWA(1.Faculty of Engineering Science, Osaka University)
