1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

Aug 26 - Aug 27, 1981The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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International Conference on Solid State Devices and Materials
1981 Conference on Solid State Devices

1981 Conference on Solid State Devices

Aug 26 - Aug 27, 1981The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-4-5]Formation of an epitaxial Si/insulator/Si structure by vacuum deposition of CaF2 and Si

T. Asano, H. Ishiwara(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
https://doi.org/10.7567/SSDM.1981.A-4-5
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