International Conference on Solid State Devices and Materials

1981 Conference on Solid State Devices

Aug 26 - Aug 27, 1981The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

International Conference on Solid State Devices and Materials

1981 Conference on Solid State Devices

Aug 26 - Aug 27, 1981The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-4-9]Novel Low Temperature (＜300℃) Annealing of Amorphous Si by Scanned High Energy (～2.5 MeV) Heavy Ion Beam

Jyoji Nakata, Kenji Kajiyama(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

https://doi.org/10.7567/SSDM.1981.A-4-9