1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan

[B-1-2]InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

K. Taira, F. Nakamura, I. Hase, H. Kawai, Y. Mori(1.Sony Corporation Research Center)
https://doi.org/10.7567/SSDM.1990.B-1-2
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