1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
[B-2-1]GaAs Heterojunction Bipolar Transistor (HBT) Device and IC Technology for High-Performance Analog/Microwave, Digital, and A/D Conversion Applications
Michael E. KIM, A. K. OKI, D. K. UMEMOTO, L. T. TRAN, L. M. PAWLOWICZ, K. W. KOBAYASHI, P. C. GROSSMAN, D. C. STREIT, K. S. STOLT, M. E. HAFIZI, J. B. CAMOU, R. ESFANDIARI, B. L. NELSON, B. K. OYAMA, B. R. ALLEN(1.TRW Inc., Electronics and Technology Division)
