1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
[B-2-3]Elimination of Emitter-Mesa Etching and Complete Planarization of Heterojunction Bipolar Transistors via Doping Selective Base Contact and Selective Hole Epitaxy
T. Y. Kuo, K. W. Goossen, J. E. Cunningham, C. G. Fonstad, F. Ren, W. Jan(1.AT&T Bell Laboratories, 2.Massachusetts Institute of Technology)
