1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan

[B-2-7]Fabrication and Characterization of InAs Channel Heterojunction Field-Effect Transistors

Kanji Yoh, Toshiaki Moriuchi, Masataka Inoue(1.Department of Electrical Engineering, Osaka Institute of Technology)
https://doi.org/10.7567/SSDM.1990.B-2-7
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