1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
[B-3-6]Improvement of GaAs MESFET's Characteristics on SiO2-Back-Coated Si Substrate by MOCVD
Takashi Egawa, Shinji Nozaki, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno(1.Department of Electrical and Computer Engineering, 2.Nagoya Institute of Technology)
