1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan

[B-4-6]Replacement of Surface In Atoms by Ga during Migration-Enhanced Epitaxy

Hiroshi YAMAGUCHI, Yoshiji HORIKOSHI(1.NTT Basic Research Laboratories)
https://doi.org/10.7567/SSDM.1990.B-4-6
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