1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan

[C-2-1]Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O Ambient

Hisashi FUKUDA, Tomiyuki ARAKAWA, Seigo OHNO(1.Semiconductor Tech. Lab., 2.Oki Electric Industry Co., Ltd)
https://doi.org/10.7567/SSDM.1990.C-2-1
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