1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
1990 International Conference on Solid State Devices and Materials
Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
[C-2-3]MOS Characteristics and Reliability of Thin Gate Dielectrics Grown by Rapid Thermal Processing in O2 Diluted with NF3
G. Q. Lo, W. Ting, D. L. Kwong, J. Kuehne, C. W. Magee(1.Microelectronics Research Center, The University of Texas at Austin, 2.Texas Instrument Inc., 3.Evans East Inc.)
