1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan

[C-2-6]A Mechanism of Gate Oxide Deterioration Caused by Wafer Charging during Ion Implantation

Hirotaka MUTO, Haruhisa FUJII, Koichiro NAKANISHI, Shingo IKEDA(1.Manufacturing Development Lab., 2.Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1990.C-2-6
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