1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan
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International Conference on Solid State Devices and Materials
1990 International Conference on Solid State Devices and Materials

1990 International Conference on Solid State Devices and Materials

Aug 22 - Aug 24, 1990Hotel Sendai Plaza, Sendai, Japan

[C-2-8]A Model for SiNx CVD Film Growth Mechanism by Using SiH4 and NH3 Source Gases

Akihiko Ishitani, Shiro Koseki(1.VLSI Development Division, NEC Corporation, 2.NEC Scientific Information System Development, Ltd.)
https://doi.org/10.7567/SSDM.1990.C-2-8
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