1993 International Conference on Solid State Devices and Materials
Aug 29 - Sep 1, 1993Makuhari Messe, Chiba, Japan
1993 International Conference on Solid State Devices and Materials
Aug 29 - Sep 1, 1993Makuhari Messe, Chiba, Japan
[A-2-3]Sub 0.1μm nMOSFET Utilizing Narrow Trench Gate and Selective Excimer Laser Annealing (SELA)
Hironori Tsukamoto, Hiroshi Yamamoto, Michitaka Kubota, Thomas Boehm, Takashi Noguchi, Machio Yamagishi(1.Advanced Device Division, ULSI Research and Development Laboratories, Sony Corporation, 2.Semiconductors Department, Research Center, Sony Corporation)
