1993 International Conference on Solid State Devices and Materials
Aug 29 - Sep 1, 1993Makuhari Messe, Chiba, Japan
1993 International Conference on Solid State Devices and Materials
Aug 29 - Sep 1, 1993Makuhari Messe, Chiba, Japan
[S-III-4]Influence of the Structural Transition Layer on the Reliability of Thin Gate Oxides
Eiji HASEGAWA, Koichi AKIMOTO, Masaru TSUKIJI Taishi KUBOTA, Akihiko ISHITANI(1.ULSI Device Development Laboratories, NEC Corporation, 2.Microelectronics Research Laboratories, NEC Corporation)
