2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[A-2-4]Comparison of the Interconnect Capacitances of Various SRAM Cell Layouts To Achieve High Speed, Low Power SRAM Cells
Y. Tsukamoto, K. Nii, Y. Yamagami, T. Yoshizawa, S. Imaoka, T. Suzuki, A. Shibayama, H. Makino(1.LSI Product Technology Unit , Renesas Technology Corp., 2.Corporate Development Div., Semiconductor Company, Matsushita Electric Industrial Corp., 3.Electronic Devices Design Center, Renesas Device Design Corp.)
