2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[A-3-3]A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process
H. Ohji, A. Mutoh, K. Torii, R. Mitsuhashi, A. Horiuchi, T. Maeda, H. Itoh, T. Kawahara, K. Hayashi, T. Sasaki, N. Kasai, H. Kitajima, M. Yasuhira, T. Arikado(1.Semiconductor Leading Edge Technologies, Inc.)
