2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[A-7-2]Effect of Coulomb Scattering on Stress-Induced Mobility Degradation in nMOSFETs with HfAlOX/SiO2 Dielectrics
W. Mizubayashi, N. Yasuda, H. Hisamatsu, H. Ota, K. Tominaga, K. Iwamoto, K. Yamamoto, T. Horikawa, T. Nabatame, A. Toriumi(1.MIRAI-ASRC AIST, 2.MIRAI-ASET, AIST, 3.Department of Materials Science, The University of Tokyo, Japan)
