2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[A-9-2]Channel direction impact of (110) surface Si substrate on performance improvement in sub-100 nm MOSFETs
Hidetatsu Nakamura, Tatsuya Ezaki, Toshiyuki Iwamoto, Mitsuhiro Togo, Nobuyuki Ikarashi, Masami Hane, Toyoji Yamamoto(1.Silicon Systems Research Labs., NEC Corporation)
