2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
2003 International Conference on Solid State Devices and Materials
Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
[B-1-3]A proposal of new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction
Gen Hirooka, Minoru Noda, Masanori Okuyama(1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)
