2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan
International Conference on Solid State Devices and Materials
2003 International Conference on Solid State Devices and Materials

2003 International Conference on Solid State Devices and Materials

Sep 16 - Sep 18, 2003Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-1-4]Long-Term Stabilization of Sense Signals in a Non-Destructive Readout FeRAM by Intentional Modification of the Polarization Hysteresis Curve for Low Voltage Applications

T. Yamada, Y. Kato, S. Koyama, Y. Shimada(1.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)
https://doi.org/10.7567/SSDM.2003.B-1-4