2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-1-2]High-k Gated Germanium Metal-Oxide-Semiconductor Capacitors with GeO2 Surface Passivation and Fluorine Incorporation
R. Xie1,2, W. He1, M. Yu2, C. Zhu1(1.National Univ. of Singapore, 2.Inst. of Microelectronics, Singapore)
