2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
International Conference on Solid State Devices and Materials
2008 International Conference on Solid State Devices and Materials

2008 International Conference on Solid State Devices and Materials

Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-2-2]Impact of the Activation Annealing Temperature on the Performance, NBTI and TDDB Lifetime of High-k/Metal Gate Stack pMOSFETs

M. Sato1, T. Aoyama1, Y. Nara1, Y. Ohji1(1.Selete, Japan)
https://doi.org/10.7567/SSDM.2008.A-2-2