2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-2-3]Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric
C. Y. Kang1, C. S. Park1, H. K. Park1, S. C. Song1, R. Choi1, B. H. Park2, B. Woo2, K. T. Lee3, J. Lee4, H. Hwang4, G. Bersuker1, B. H. Lee1, H. H. Tseng1, R. Jammy5(1.SEMATECH, 2.Poongsan Microtech, USA, 3.POSTECH, 4.GIST, Korea, 5.IBM Assignee, USA)
