2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-2-5]Generation of a New Interface-State Associated with Ultra-Thin Gate Dielectrics/Silicon under Electric Stress
H. Mori1, H. Matsuyama1, S. Watanabe2(1.Fujitsu Microelectronics Ltd., 2.Fujitsu Labs. Ltd., Japan)
