2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-3-4]Trap Generation in Sc2O3/La2O3 High-κ Gate Stack by Nanoscale Electrical Stress
Y. C. Ong1, D. S. Ang1, S. J. O'Shea2, K. L. Pey1, C. H. Tung3, T. Kawanago4, K. Kakushima4, H. Iwai4(1.Nanyang Tech. Univ., 2.Inst. of Materials Res. and Eng., 3.Inst. of Microelectronics, Singapore, 4.Tokyo Tech., Japan)
