2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2008 International Conference on Solid State Devices and Materials
Sep 23 - Sep 26, 2008Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-6-1]Self-limiting Growth Behavior of Epitaxial NiSi2 and its Impact on Controlled Silicidation of Metal Source/Drain in Silicon Nanowire MOSFETs
S. Migita1, Y. Morita1, N. Taoka1, W. Mizubayashi1, H. Ota1(1.AIST, Japan)
